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5GHz High Efficiency DPD FEM Solution

KCT8570N

5GHz High Efficiency DPD FEM Solution

产品介绍

KCT8570N is a highly integrated RF front-end integrated circuit incorporates key RF functionality needed for IEEE 802.11a/n/ac/ax/be WLAN systems operating in the 5.15-5.95GHz range. It integrates a high-efficiency, high-linearity power amplifier (PA), a low noise amplifier (LNA) with bypass, the associated matching network, and harmonic filters all in one device.


KCT8570N is a 5V supply voltage power amplifier that conserves power consumption while maintaining the highest linear output power and excellent throughput. A DC voltage output power detector and a digital enable control are also integrated. A coupler function is integrated to further improve the linearity of the FEM.


KCT8570N is assembled in a compact, low-profile 3 x 3 x 0.75mm 16-lead QFN package, which is an ideal RF front-end solution for implementing 5GHz highpower WLAN systems supporting multiple standards including 802.11a/n/ac/ax.


产品规格

Integrated 802.11ax 5GHz PA, LNA with bypass and T/R switch

Fully-matched input and output

Transmit gain: 29.5dB at 5V

Receive gain: 16.0dB at 5V

Noise Figure: 1.8dB at 5V

Output power: +21.5dBm @ -43dB DEVM with DPD, EHT160/MCS13, 5V

                         +22.5dBm @ -40dB DEVM with DPD, HE160/MCS11, 5V

                         +24.0dBm @ -35dB DEVM with DPD, VHT80/MCS9, 5V

                         +25.0dBm @ -30dB DEVM with DPD, HT20/MCS7, 5V

ESD protection circuitry on all PINs

Simplified external components required

Small package: QFN16-pin, 3mm x 3mm x0.75mm (MSL3, 260°C per JEDEC J-STD-020)

RoHS and REACH Compliant


5GHz High Efficiency DPD FEM Solution

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